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3DD208 Datasheet, Inchange Semiconductor

3DD208 transistor equivalent, silicon npn power transistor.

3DD208 Avg. rating / M : 1.0 rating-12

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3DD208 Datasheet

Application


*Designed for switching regulator and power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAM.

Description


*Collector-Emitter Breakdown Voltage- : V(BR)CEO= 200V(Min.)
*DC Current Gain- : hFE= 30~250(Min.)@IC= 0.5A
*Collector-Emitter Saturation Voltage- : VCE(sat)= 2.0V(Max)@ IC= 1A
*Minimum Lot-to-Lot variations for robust device performa.

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3DD208 Page 1 3DD208 Page 2

TAGS

3DD208
Silicon
NPN
Power
Transistor
Inchange Semiconductor

Manufacturer


Inchange Semiconductor

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